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Distribution analysis of carbon and sulphur in CVD‐Al 2 O 3 ‐layers by SIMS using Cs + primary ions
Author(s) -
Wilhartitz P.,
Grasserbauer M.,
Altena H.,
Lux B.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740080404
Subject(s) - aluminium , sputtering , analytical chemistry (journal) , ion , secondary ion mass spectrometry , chemistry , oxide , aluminium oxide , carbon fibers , sulfur , carbide , aluminium oxides , mass spectrometry , materials science , thin film , metallurgy , nanotechnology , environmental chemistry , biochemistry , chromatography , catalysis , organic chemistry , composite number , composite material
Secondary ion mass spectrometry was used to determine the carbon and sulphur content of aluminium oxide layers. Information about the lateral distribution was gained using ion imaging. For the characterization of the depth distribution, sputter profiling with high mass resolution was applied. Carbon was found to form a network structure within the aluminium oxide layer but carbides could not be detected. Evaluation of atomic and molecular ion patterns were used for speciation of carbon. Practical sensitivity factors were determined and used for semiquantitative evaluation of the depth profiles. The sputter rate of aluminium oxide and the ionisation probabilities of oxygen and aluminium were calculated.