Premium
Quantitative AES depth profiling of very thin overlayers
Author(s) -
Sanz J. M.,
Hofmann S.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740080403
Subject(s) - sputtering , tantalum , auger electron spectroscopy , materials science , alloy , auger , thin film , yield (engineering) , analytical chemistry (journal) , chemistry , atomic physics , metallurgy , nanotechnology , physics , nuclear physics , chromatography
A model calculation is proposed which quantitatively evaluates measured AES sputtering profiles of very thin overlayers in terms of the original elemental depth distribution. The model is based on the sequential layer sputtering model, including the escape depth of the Auger electrons. A proposal for the incorporation of a site dependent sputtering yield and of preferential sputtering effects is presented and the limitations and capabilities are discussed. Applications to experimental data are shown for oxide films on tantalum, for an oxidefilm on a NiCr20 alloy and for a passive film on FeCr18Ni9.