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SiO compound formation by oxygen ion implantation into silicon
Author(s) -
Hensel E.,
Wollschläger K.,
Schulze D.,
Kreissig U.,
Skorupa W.,
Finster J.
Publication year - 1985
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740070502
Subject(s) - stoichiometry , x ray photoelectron spectroscopy , annealing (glass) , oxide , oxygen , analytical chemistry (journal) , silicon , silicon oxide , materials science , ion , crystallography , chemistry , chemical engineering , metallurgy , silicon nitride , organic chemistry , chromatography , engineering
Abstract High dose oxygen ion implantation into silicon at 30 keV was performed to produce understoichiometric and stoichiometric surface oxide layers of ∼160 nm thickness. The oxygen depth profile and oxide stoichiometry was determined by RBS and XPS. SiO compound formation was found by IR spectroscopy and XPS in the unannealed samples as well as after target heating, furnace or flash lamp annealing. As implanted understoichiometric layers consist of random bonding like SiO x (O < x < 2), demixing into Si and SiO 2 after annealing. Unannealed stoichiometric layers are bond strained SiO 2 . The activation energies of demixing and of the annealing of bond strains are determined to 0.19 and 0.13 eV, respectively. The removing of bond strains occurs at temperatures ≥800 °C in a time shorter than 1 s. The SiO 2 /Si transition region of unannealed stoichiometric layers consists of SiO x with an extent of about 10 nm. After annealing this extent diminishes to 0.8–1 nm in consequence of oxidation by excess oxygen from the overstoichiometric oxide region. This thickness is comparable with that of thermal oxide.