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GaAs oxides formed at room temperature in air: Comparison of X‐ray photoelectron spectroscopic and ion microprobe mass analyses
Author(s) -
Demanet C. M.,
Rawsthorne E. D.,
Stander C. M.
Publication year - 1985
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740070402
Subject(s) - microprobe , x ray photoelectron spectroscopy , analytical chemistry (journal) , hydroxide , oxide , ion , gallium , secondary ion mass spectrometry , mass spectrometry , chemistry , materials science , inorganic chemistry , mineralogy , nuclear magnetic resonance , environmental chemistry , physics , organic chemistry , chromatography
An ion microprobe mass analysis (IMMA) study of the oxides formed on GaAs at ambient temperature and in ambient atmosphere is compared with a similar study carried out using XPS. The distribution of the various oxides identified from their unequivocal fragment ions is analysed. The multilayer model proposed on the basis of XPS results is largely confirmed with the exception of gallium hydroxide which, from the IMMA results, appears to be distributed across the whole oxide thickness.