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The effect of surface topography evolution on sputter profiling depth resolution in Si
Author(s) -
Carter G.,
Nobes M. J.,
Lewis G. W.,
Brown C. R.
Publication year - 1985
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740070108
Subject(s) - sputtering , materials science , facet (psychology) , erosion , high resolution , ion , resolution (logic) , mineralogy , geology , chemistry , geometry , molecular physics , geomorphology , nanotechnology , thin film , remote sensing , mathematics , computer science , psychology , social psychology , organic chemistry , personality , artificial intelligence , big five personality traits
Experimental studies of the development of surface topography on Si surfaces during Ar + ion bombardment and sputter erosion indicates that the Si becomes continuously prismatically facetted and that facet dimensions increase linearly with mean eroded depth. These observations lead to an analytic model of the achievable depth resolution δ z / z 0 in sputter erosion which is independent, for deep profiles of z 0 .