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A multilayer model for GaAs oxides formed at room temperature in air as deduced from an XPS analysis
Author(s) -
Demanet C. M.,
Marais M. A.
Publication year - 1985
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740070104
Subject(s) - x ray photoelectron spectroscopy , reactivity (psychology) , electron , atmosphere (unit) , materials science , analytical chemistry (journal) , interpretation (philosophy) , chemistry , physics , thermodynamics , nuclear magnetic resonance , environmental chemistry , medicine , alternative medicine , pathology , quantum mechanics , computer science , programming language
An XPS study of the oxides formed on GaAs at ambient temperature and in ambient atmosphere is reported. Special attention has been paid to the interpretation of the Ga 3d and As 3d energy levels. By varying the angle between energy analysed electrons and the surface of the sample the depth distribution of the various oxides has been deduced. A multilayer model deduced from XPS analysis and the known reactivity of GaAs and the various oxides is proposed.