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Magnetron sputtered gold contacts on n ‐GaAs
Author(s) -
Buonaquisti A. D.,
Matson R. J.,
Russell P. E.,
Holloway P. H.
Publication year - 1984
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740060606
Subject(s) - sputter deposition , cavity magnetron , schottky barrier , materials science , schottky diode , deposition (geology) , sputtering , physical vapor deposition , optoelectronics , analytical chemistry (journal) , chemistry , thin film , nanotechnology , diode , paleontology , chromatography , sediment , biology
DC planar magnetron sputtering has been used to deposit gold Schottky barrier electrical contacts on n ‐type GaAs. The electrical character of the contact was determined from current‐voltage (I‐V) and electron‐beam‐induced voltage (EBIV) data. These data showed that the Schottky barrier height of magnetron sputter‐deposited contacts was lower than for vapor deposited contacts. The barrier‐height was a function of the deposition rate for electronically isolated substrates, and was dependent upon both the surface treatment prior to contact deposition, and upon doping density and post‐deposition heat treatment. These effects are discussed in terms of particle irradiation of the surface during contact deposition.