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AES and XPS studies of surface films deposited during the plasma etching of silicon dioxide layers
Author(s) -
Tuppen C. G.,
Heckingbottom R.,
Gill M.,
Heslop C.,
Davies G. J.
Publication year - 1984
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740060604
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , etching (microfabrication) , sputtering , analytical chemistry (journal) , silicon , plasma etching , silicon dioxide , reactive ion etching , materials science , electrode , plasma , oxygen , chemistry , layer (electronics) , thin film , chemical engineering , nanotechnology , composite material , optoelectronics , physics , chromatography , quantum mechanics , nuclear physics , engineering , organic chemistry
Surface films deposited during the selective plasma etching of SiO 2 on Si by CHF 3 have been studied using Auger electron spectroscopy (AES) 2 and x‐ray photoelectron spectroscopy (XPS). The films have been subdivided into two types: ‘persistent’ and ‘non‐persistent’. Non‐persistent films could be etched in an oxygen plasma and consisted of a fluorocarbon polymer. The main components of persistent films (unreactive in an oxygen plasma) were oxygen and fluorine compounds of silicon with impregnated metal atoms sputtered from electrodes in the plasma etcher. The thickness of persistent films was found to depend on the electrode spacing and electrode material. This effect has been explained in terms of the ion sputtering inherent within the parallel plate plasma etching system.