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SIMS study of the penetration of metallic secondary impurities in screen‐printed silicon solar cells
Author(s) -
Van Craen M.,
Frisson L.,
Adams F. C.
Publication year - 1984
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740060602
Subject(s) - silicon , penetration (warfare) , secondary ion mass spectrometry , materials science , impurity , metal , penetration depth , solar cell , analytical chemistry (journal) , chemical engineering , metallurgy , ion , chemistry , optoelectronics , optics , physics , organic chemistry , chromatography , operations research , engineering
The penetration of metallic B, Ti, Fe, Cu and Ag in silicon solar cells was studied. They were prepared using the screen printing process for metallization. The level and depth of penetration were determined using secondary ion mass spectrometry (SIMS). Quantitative SIMS depth profile analysis was performed using ion implanted substrates as standard materials. The influence of different production parameters, such as silicon crystal orientation, metallization temperature, composition of the Ag‐paste and the presence of an anti‐reflective TiO x coating on the silicon cells were determined. The penetration of some metallic species has considerable influence on the solar cell characteristics and its efficiency. The penetration levels can not be explained by diffusion but are probably related to more reactive interactions.