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Compositional changes of ZnSe during implantation measured by SIMS and AES
Author(s) -
Haberland D.,
Krabel B.,
Nelkowski H.,
Schlaak W.
Publication year - 1984
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740060505
Subject(s) - ion implantation , stoichiometry , ion , secondary ion mass spectrometry , layer (electronics) , analytical chemistry (journal) , materials science , chemistry , nanotechnology , environmental chemistry , organic chemistry
Using a specially designed system it is possible to observe the compositional changes of a surface during implantation. The results of implantation with Ag, Cl, Na into ZnSe will be presented. From the measured intensity of the secondary ions produced by ion implantation into the compound semiconductor ZnSe we will infer to the stoichiometric disturbance of the implanted layer. After implantation the changes can be observed quantitatively by AES, too.