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Quantification of preferential sputtering and contamination overlayer effects in AES sputter profiling
Author(s) -
Hofmann S.,
Sanz J. M.
Publication year - 1984
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740060208
Subject(s) - overlayer , sputtering , contamination , analytical chemistry (journal) , oxygen , materials science , chemistry , thin film , environmental chemistry , nanotechnology , ecology , organic chemistry , biology
A model calculation is presented for the quantitative evaluation of AES sputtering profiles of thin layers in the case of preferential sputtering and a contamination overlayer. The model is based on the statistical contribution to depth resolution, the escape depth effect correction and the preferential sputtering model of Ho et al. (1976). Applications to measured AES sputtering profiles of the anodic oxides Ta 2 O 5 and Nb 2 O 5 allow the determination of the thickness and the oxygen content of the contamination overlayer.