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Characterization of contamination layers by emission angle dependent XPS with a double‐pass CMA
Author(s) -
Hofmann S.,
Sanz J. M.
Publication year - 1984
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740060207
Subject(s) - x ray photoelectron spectroscopy , hydroxide , analytical chemistry (journal) , oxide , materials science , hydrogen , oxygen , emission intensity , hydride , chemistry , inorganic chemistry , chemical engineering , doping , metallurgy , chromatography , optoelectronics , organic chemistry , engineering
The use of non destructive depth profiling by emission angle dependent XPS analysis is demonstrated for a thin contamination layer consisting of carbon, hydrogen and hydride‐bonded oxygen on top of an anodic oxide of Nb 2 O 5 on Nb. Using a double‐pass CMA with an angle resolved aperture and measured intensity ratios of O 1s (hydroxide)/O 1s (oxide) and O 1s (hydroxide‐/C 1s) as a function of the emission angle, the thickness ( d = 3.3 nm) and composition are determined.