Characterization of contamination layers by emission angle dependent XPS with a double‐pass CMA | Zendy

Hofmann S. | Zendy; Sanz J. M. | Zendy

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Characterization of contamination layers by emission angle dependent XPS with a double‐pass CMA

Author(s) -

Hofmann S.,

Sanz J. M.

Publication year - 1984

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.740060207

Subject(s) - x ray photoelectron spectroscopy , hydroxide , analytical chemistry (journal) , oxide , materials science , hydrogen , oxygen , emission intensity , hydride , chemistry , inorganic chemistry , chemical engineering , doping , metallurgy , chromatography , optoelectronics , organic chemistry , engineering

The use of non destructive depth profiling by emission angle dependent XPS analysis is demonstrated for a thin contamination layer consisting of carbon, hydrogen and hydride‐bonded oxygen on top of an anodic oxide of Nb 2 O 5 on Nb. Using a double‐pass CMA with an angle resolved aperture and measured intensity ratios of O 1s (hydroxide)/O 1s (oxide) and O 1s (hydroxide‐/C 1s) as a function of the emission angle, the thickness ( d = 3.3 nm) and composition are determined.

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