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On the influence of crater geometry on depth resolution of AES and XPS profiles of tantalum oxide films
Author(s) -
Mathieu H. J.,
Landolt D.
Publication year - 1983
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740050205
Subject(s) - x ray photoelectron spectroscopy , impact crater , resolution (logic) , materials science , raster scan , analyser , tantalum , ion , oxide , beam (structure) , ion beam , analytical chemistry (journal) , optics , chemistry , nuclear magnetic resonance , physics , metallurgy , organic chemistry , chromatography , astronomy , artificial intelligence , computer science
The influence of crater geometry on depth resolution in AES and XPS depth profile analysis was studied using modern apparatus with double cylindrical mirror analyser and a differentially‐pumped ion raster gun. Anodic Ta 2 O 5 films with thicknesses between 3–100 nm served as a model system. Ion and electron beam raster size, beam alignment, ion energy and film thickness were varied. Results show that optimalization of geometrical factors is important for obtaining good depth resolution. Under favourable conditions, depth resolution characterized by the measured apparent width of the metal–oxide interface was found to be as low as 1.5 nm for AES and 2.3 nm for XPS, respectively. Because of impurity adsorption better depth resolution is obtained if analysis and sputtering are carried out simultaneously rather than alternatively.