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Sputter‐depth profiling in AES: Dependence of depth resolution on electron and ion beam geometry
Author(s) -
Duncan S.,
Smith R.,
Sykes D. E.,
Walls J. M.
Publication year - 1983
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740050204
Subject(s) - resolution (logic) , ion , electron , cathode ray , ion beam , sputtering , focused ion beam , materials science , range (aeronautics) , impact crater , beam (structure) , atomic physics , chemistry , optics , physics , thin film , nanotechnology , organic chemistry , astronomy , artificial intelligence , computer science , composite material , quantum mechanics
Abstract The precise geometrical relationship between the ion and electron beams and the sample affects the depth resolution of sputter‐depth profiles in AES. A theory is presented which predicts this instrumental depth resolution by considering the shape of the ion‐eroded crater and the corresponding orientation of the electron beam. The variation in depth resolution is analysed for a range of conditions including (a) varying ion and electron beam diameter (b) the angular orientation of the electron and ion beam and (c) the effect of misalignment of the two beams.