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Ion sputtering in the surface analysis of practical surfaces
Author(s) -
Keenlyside M.,
Stott F. H.,
Wood G. C.
Publication year - 1983
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740050203
Subject(s) - sputtering , surface roughness , materials science , surface finish , profiling (computer programming) , etching (microfabrication) , ion , optics , composite material , nanotechnology , computer science , chemistry , thin film , physics , layer (electronics) , organic chemistry , operating system
The routine analysis of many practical, engineering specimens utilizing sputter‐etch, in‐depth profiling, coupled with a surface‐analysis technique, is severely restricted by the roughness of the surface under study. Limitations imposed by the irregularities in such surfaces have been examined and a method of relating the subsequent degradation of the in‐depth profile to the specimen roughness is described. This method has been used to assess the value of in‐depth profiling for surfaces produced in practical situations. In addition, the importance of specimen‐incident sputtering‐beam geometry in optimizing the uniformity of etching over a rough specimen surface, using a number of different arrangements, is evaluated.