Premium
Ion beam induced composition changes during auger sputter profiling of thin Al films on InP
Author(s) -
Skinner D. K.,
Swanson J. G.,
Haynes C. V.
Publication year - 1983
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740050109
Subject(s) - auger , ion , sputtering , ion beam mixing , ion beam , thin film , recoil , distortion (music) , atomic physics , beam energy , beam (structure) , chemistry , auger effect , materials science , auger electron spectroscopy , analytical chemistry (journal) , ion beam deposition , optics , optoelectronics , nanotechnology , nuclear physics , physics , cmos , amplifier , organic chemistry , chromatography
Auger sputter profiles of thin AI films on InP are presented and shown to be susceptible to an unusual type of ion beam induced interfacial distortion. It is found that recoil implantation and atomic mixing produce a differential broadening of the In and P at the interface which can seriously affect the integrity of the Auger profile. Energy shifts in the AI Auger peak indicate that this distortion is associated with AIP formation to a depth dictated by the ion beam energy and species. Experimental requirements for the reduction of interfacial distortion are discussed. We also consider the influence of the ion beam on the topography and morphology of the InP surface in relation to interfacial distortion.