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Element‐Specific broadening effects in SIMS depth profiling of light impurities implanted in silicon
Author(s) -
Wach W.,
Wittmaack K.
Publication year - 1982
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740040603
Subject(s) - silicon , dopant , impurity , sputtering , analytical chemistry (journal) , atomic physics , chemistry , beam energy , materials science , molecular physics , beam (structure) , doping , thin film , optics , nanotechnology , optoelectronics , physics , organic chemistry , chromatography
Beam‐induced broadening effects in SIMS depth profiling have been studied for eight impurities (Li through Al) implanted in amorphized silicon at energies between 1 and 15 keV. Depth profiling was performed under Ar + (⩽2.5 keV) or O 2 +(⩽3 keV) impact. In selected cases (Li, N) the effect of the probe energy has also been investigated. The measured profiles show exponential tails. The decay length γ characterizing these tails exhibits strong oscillations when plotted as a function of the atomic number of the dopant. Maxima are seen for N and O (γ ≃ 7 nm) as well as for Mg (γ ≃ 13 nm), minima for B and Na (γ ≃ 2 nm). The results suggest that the observed effects are due to a yet unpredictable combination of collisional mixing, defect‐assisted diffusion and selective sputtering.