Premium
The use of plasmon‐loss peaks in studying the epitaxial silicon on alumina interface
Author(s) -
Thomas J. H.,
Hofmann S.
Publication year - 1982
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740040406
Subject(s) - plasmon , electron , silicon , excited state , atomic physics , ion , extrapolation , atom (system on chip) , epitaxy , materials science , cathode ray , surface plasmon , optoelectronics , chemistry , nanotechnology , physics , mathematical analysis , mathematics , organic chemistry , quantum mechanics , computer science , embedded system , layer (electronics)
Intense plasmon‐loss features excited by kilovolt electron beams used in AES have been used to study the Si on Al 2 O 3 interface. Variable electron beam energies provide a means of continuously varying the electron escape depth and subsequently removing this contribution from the plasmon‐depth profiles. Parametrically varying the ion energy extrapolation of the interface width to zero ion energy yields an intrinsic interface width of 13±4 å, or about six Si atom layers.