Premium
Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si
Author(s) -
Lewis G. W.,
Kiriakides G.,
Carter G.,
Nobes M. J.
Publication year - 1982
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740040404
Subject(s) - sputtering , ion , fluence , contamination , scanning electron microscope , materials science , surface modification , single crystal , analytical chemistry (journal) , chemistry , mineralogy , nanotechnology , crystallography , composite material , environmental chemistry , thin film , ecology , organic chemistry , biology
Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi‐dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant‐induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed.