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Results of a Ta 2 O 5 sputter yield round robin
Author(s) -
Bevolo A. J.
Publication year - 1981
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740030603
Subject(s) - sputtering , tantalum , yield (engineering) , analytical chemistry (journal) , auger , materials science , ion , chemistry , atomic physics , metallurgy , thin film , nanotechnology , physics , organic chemistry , chromatography
The ASTM E42.08 subcommittee on ion beam sputtering has sponsored a round robin to measure the sputter yield of anodic Ta 2 O 5 films grown on tantalum. The purpose of this study was to compare the results from different laboratories and to test the suitability of this material as a standard for sputter yield measurements. Six different laboratories made 42 separate measurements of the sputter yield of Ta 2 O 5 by determining the time to the Ta 2 O 5 /Ta interface during Auger depth profiles using 2 ke V Ar + ions. The scatter of an individual set of measurements varied from 3 to 6% (except for one laboratory) while the means of the individual set of measurements varied about 10% from the average of all of the measurements. This result indicated the presence of systematic errors among the various laboratories. The possible sources of these errors are discussed.