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Sputtering of metals with 20 keV O 2 + : Characteristic etch patterns and sputtered atom yields
Author(s) -
Tsunoyama K.,
Suzuki T.,
Ohashi Y.,
Kishidaka H.
Publication year - 1980
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740020605
Subject(s) - atom (system on chip) , sputtering , yield (engineering) , ion , crystallite , oxygen atom , atomic physics , chemistry , oxygen , binding energy , oxide , materials science , analytical chemistry (journal) , crystallography , metallurgy , thin film , nanotechnology , molecule , physics , organic chemistry , chromatography , computer science , embedded system
The surface structures of polycrystalline pure metals bombarded with 20 ke V O + 2 were observed by a SEM and their sputtered atom yields obtained by measuring the depth of crater with an interferoscope. The etch patterns produced were classified according to the binding energy of mono‐oxide B MO of the target atom M and an oxygen atom; the surface become smooth as the binding energy increased. The sputtered atom yield showed similar periodicity to those obtained by noble gas ion bombardment. It was therefore concluded that the sputtered atom yield was primarily determined by physical collision of atoms in the target material and was not affected very much by the chemical reaction of implanted oxygen atoms.