Premium
Low energy nitrogen implantation profiles in cobalt using AES
Author(s) -
Malherbe J. B.,
Hofmann S.
Publication year - 1980
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740020507
Subject(s) - nitrogen , cobalt , auger , argon , auger electron spectroscopy , sputtering , low energy , ion implantation , analytical chemistry (journal) , atomic physics , chemistry , electron , ion , materials science , metallurgy , physics , nanotechnology , thin film , nuclear physics , environmental chemistry , organic chemistry
Using AES in combination with argon depth profiling, low energy (0.5–5 keV) nitrogen implantation profiles were determined. The profiles show reasonable agreement to the Schulz‐Wittmaack model of ion collection during sputtering when the effect of the finite escape depth of the Auger electrons is taken into account. The projected ranges of nitrogen in cobalt obtained when using this model shows reasonable correspondence with the LSS‐calculated ones.