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An alternative to the relative sensitivity factor approach to quantitative SIMS analysis
Author(s) -
Morgan A. E.
Publication year - 1980
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740020402
Subject(s) - sensitivity (control systems) , matrix (chemical analysis) , binary number , chemistry , analytical chemistry (journal) , ionization , oxide , ion , sample (material) , value (mathematics) , thermodynamics , statistics , physics , mathematics , chromatography , arithmetic , organic chemistry , electronic engineering , engineering
Measurements have been made of positive secondary ion currents from oxygen bombardment of glass standards, obtained either from NBS or specially prepared in this laboratory. By using one fitting parameter, the ionization temperature T i , a semi‐quantitative analysis (accurate to within a factor of 2–3) is possible on any one of these standards. This approach, whilst achieving an accuracy comparable to that obtainable using relative sensitivity factors, does not restrict the analysis to those elements for which sensitivity factors are available. Further, change of sample matrix, which can alter sensitivity factors in a seemingly puzzling fashion, can easily be rationalized and accommodated through variation in T i . Values of T i for 16 binary oxides lie between 5500 and 9500 K. The T i value for a more complex matrix can be estimated on a proportional basis from these binary oxide results.