Premium
The energy dependence of the electron mean free path
Author(s) -
Wagner C. D.,
Davis L. E.,
Riggs W. M.
Publication year - 1980
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740020204
Subject(s) - mean free path , exponent , free electron model , range (aeronautics) , electron , energy (signal processing) , simple (philosophy) , atomic physics , chemistry , materials science , analytical chemistry (journal) , physics , quantum mechanics , philosophy , linguistics , epistemology , composite material , chromatography
Experiments providing multi‐point data on electron mean free paths vs. energy in pure materials have been reviewed for energies from 150 to 4000 eV. With the assumption that the simple equation λ= k E m can approximate the data, one obtains values of m between 0.53 and 0.80. Observations by ESCA of widely spaced photoelectron lines for Mg, Cu, Zn, Ga, Ge and As also lead to the conclusion that the exponent is considerably larger than 0.5, and is more likely in the range 0.65‐0.75.