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The dependence on the angle of incidence of the steady state sputter yield of silicon bombarded by oxygen ions
Author(s) -
Warmoltz N.,
Werner H. W.,
Morgan A. E.
Publication year - 1980
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740020203
Subject(s) - sputtering , yield (engineering) , silicon , oxygen , ion , argon , analytical chemistry (journal) , steady state (chemistry) , angle of incidence (optics) , sputter deposition , chemistry , materials science , limiting oxygen concentration , atomic physics , thin film , optics , nanotechnology , optoelectronics , physics , metallurgy , chromatography , organic chemistry
The increased dependence of the sputter yield of silicon on the angle of incidence under oxygen ion bombardment, as compared to argon ion bombardment, observed during a SIMS analysis is discussed. Taking into account that the sputter yield depends on the implanted oxygen concentration, a relation is derived between the steady state sputter yield and the implanted oxygen surface concentration for different angles of incidence. Since this relation is in itself insufficient to determine the steady state values of the sputter yield and the surface concentration actually obtained, a graphical method is used to combine it with a second one, viz. the dependence of the momentary sputter yield on the momentary surface concentration. Measurements of the steady state sputter yield of silicon, bombarded by oxygen ions in the lower keV range at different angles of incidence, agree with the predicted values.