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Thermal oxidation of GaO x N y ‐covered GaAs surfaces
Author(s) -
Shiota I.,
Nishizawa J.
Publication year - 1979
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740010604
Subject(s) - oxidizing agent , oxide , layer (electronics) , sputtering , thermal oxidation , oxygen , auger electron spectroscopy , auger , materials science , analytical chemistry (journal) , thermal , chemistry , inorganic chemistry , chemical engineering , thin film , metallurgy , nanotechnology , organic chemistry , atomic physics , physics , meteorology , nuclear physics , engineering
The thermal oxidation of GaO x N y ‐ covered GaAs surfaces is investigated mainly by means of a combined Auger‐sputtering method. It is shown that an oxide layer is formed mainly at the interface between the GaO x N y film and the GaAs on thermal oxidation in O 2 gas, but the formation of the interfacial oxide layer is successfully suppressed by oxidizing in an atmosphere of O 2 gas diluted with an excess amount of NH 3 gas. The effects of oxidation temperature and the oxygen content in the GaO x N y film are further discussed. The properties of the interfacial oxide layer are compared with those of the oxide formed on free GaAs surfaces. Corresponding electrical properties are also examined.