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Investigation of the initial stages of oxidation of differently prepared aluminium by SIMS
Author(s) -
Marton D.,
Josepovits V. K.,
Csanády Á.
Publication year - 1979
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740010406
Subject(s) - yield (engineering) , sputtering , oxygen , aluminium , analytical chemistry (journal) , oxide , chemistry , ion , secondary ion mass spectrometry , diamond , thin film , materials science , metallurgy , nanotechnology , chromatography , organic chemistry
The initial stages of oxidation of thin evaporated by SIMS. The highest ratio between the AIO + ion yield at oxygen coverage ∂=0.13 and zero exposure was observed in the case of the thin film sample; moreover, for the diamond‐polished sample this ratio was higher than for the electropolished one. The Al + ion yield was found to depend on the oxygen uptake and to show a linear function in the range of the oxygen does applied. Calculations were carried out in connection with the sputtering yields of the three differently prepared samples using the ion yield values obtained. The difference between the samples analysed is ascribed to the different oxide content of their surface layers.