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Improved depth resolution in Auger depth profiling of multilayered thin films by reactive ion sputtering
Author(s) -
Blattner R. J.,
Nadel S.,
Evans C. A.,
Braundmeier A. J.,
Magee Charles W.
Publication year - 1979
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740010107
Subject(s) - sputtering , auger , auger electron spectroscopy , argon , ion , thin film , resolution (logic) , auger effect , analytical chemistry (journal) , materials science , chemistry , atomic physics , nanotechnology , physics , organic chemistry , chromatography , artificial intelligence , computer science , nuclear physics
Reactive ion sputtering (N 2 + ) is shown to improve depth resolution significantly in conventional Auger electron spectroscopy depth profiling of multilayered metallic thin film samples as compared to standard argon ion bombardment. Layer modulations on the order of the escape depth of the Auger electrons are shown to be discernible by conventional Auger depth profiling in a texturing‐prone situation (microscopically modulated thin film samples) when N 2 +is used as the sputtering species. Oxygen ion sputtering was observed to give greater improvement in depth resolution than nitrogen, but was also observed to have a deleterious influence on instrument performance. Increasing the N 2 +ion energy from 2 to 5 Ke V was found to degrade depth resolution slightly.