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XPS and Auger LMM analysis of ZnO/Si and ZnO/SiO 2 interfaces
Author(s) -
Raven M. S.
Publication year - 1979
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740010105
Subject(s) - auger , x ray photoelectron spectroscopy , chemical shift , spectral line , zinc , relaxation (psychology) , analytical chemistry (journal) , transition metal , chemistry , isotropic etching , chemical composition , auger electron spectroscopy , chemical state , atom (system on chip) , etching (microfabrication) , materials science , atomic physics , nuclear magnetic resonance , layer (electronics) , catalysis , psychology , social psychology , biochemistry , physics , organic chemistry , astronomy , chromatography , computer science , nuclear physics , embedded system
The interface between ZnO/Si and ZnO/SiO 2 was studied by etching through the junction region and analyzing XPS and Auger LMM spectra. By comparing XPS shifts and peak splitting in the Si2p spectra, chemical complexes of the form Si—O x —Zn ( x ≃1) were identified at the ZnO/Si interface. The transition from ZnO/SiO 2 was characterized by intensity variations in the O1s spectra. Relative to metallic zinc the Auger LMM shifts were −4 eV for ZnO on Si and −3 eV for ZnO on SiO 2 . Such shifts were attributed mainly to extra‐atomic relaxation. Correspondence of levels (zero Auger shifts) was observed in the spectra from the two interface regions suggesting that zinc extra‐atomic relaxation was constant throughout a region of varying chemical composition.