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Modification of structure and surface morphology in various ZnO facets via low fluence gold swift heavy ion irradiation
Author(s) -
Jagerová Adéla,
Malinský Petr,
Mikšová Romana,
Lalik Ondřej,
Cutroneo Mariapompea,
Romanenko Oleksandr,
Szökölová Kateřina,
Sofer Zdenek,
Slepička Petr,
Čížek Jakub,
Macková Anna
Publication year - 2021
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6904
Subject(s) - fluence , swift heavy ion , irradiation , raman spectroscopy , channelling , photoluminescence , materials science , spectroscopy , ion , rutherford backscattering spectrometry , luminescence , analytical chemistry (journal) , positron annihilation spectroscopy , chemistry , nanotechnology , optoelectronics , thin film , optics , positron , physics , organic chemistry , nuclear physics , chromatography , quantum mechanics , electron , positron annihilation
The influence of low fluence high‐energy ion irradiation on the modification of the ZnO surface structure and optical properties has been studied. ZnO samples of various orientations, namely, c ‐plane (0001), a ‐plane (11–20) and m ‐plane (10–10), have been implanted with 30‐MeV Au ions with fluences ranging from 5 × 10 9 to 5 × 10 11 cm −2 . Rutherford backscattering spectrometry in the channelling mode (RBS‐C) and Raman spectroscopy has shown the distinct damage accumulation in the irradiated surface layer about 1 μm depending on the ZnO facet being to larger extent evidenced in the m ‐plane ZnO. Contrary, the a ‐plane ZnO has been exhibited the lowest Zn disorder. Using atomic force microscopy (AFM), a complex morphology was detected on the irradiated samples containing grains and exhibiting increased roughness, both growing with the Au implantation fluence mainly in m ‐plane ZnO. Positron annihilation spectroscopy (PAS) has shown distinct defect accumulation at the Au‐ion fluence of 5 × 10 11 cm −2 , where RBS‐C and Raman spectroscopy indicated sudden disorder increase in the irradiated layers, probably the creation of more complex clusters of Zn and O vacancies 4VZn + 8VO initiated in connection with an overlap of individual ion impacts. Photoluminescence measurements have shown a distinct near‐band‐edge (NBE) luminescence, developing with the increasing Au‐ion fluence in various ZnO orientations. The m ‐plane ZnO had the most progressively suppressed NBE in comparison with the other orientations.