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SnO x thin films with tunable conductivity for fabrication of p–n homo‐junction
Author(s) -
GarzonFontecha Angelica,
Castillo Harvi A.,
Curiel Mario,
MontañoFigueroa Ana Gabriela,
QuevedoLopez Manuel A.,
CotaAraiza Leonel,
De La Cruz Wencel
Publication year - 2021
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6873
Subject(s) - thin film , tetragonal crystal system , materials science , annealing (glass) , fabrication , sputtering , stoichiometry , conductivity , tin oxide , electrical resistivity and conductivity , analytical chemistry (journal) , sputter deposition , tin , partial pressure , nanotechnology , optoelectronics , oxygen , crystal structure , crystallography , chemistry , composite material , doping , metallurgy , electrical engineering , alternative medicine , pathology , engineering , medicine , organic chemistry , chromatography
Tin oxide (SnO x ) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO x thin films with p‐type and n‐type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO x thin films changed from p‐type to n‐type by increasing the relative oxygen partial pressure (ppO 2 ) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO x thin films were annealed at 160°C, 180°C, and 200°C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180°C in air ambient, the SnO x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p‐type (1.10 cm 2 /Vs) and n‐type (22.20 cm 2 /Vs) were used for fabricating the device. Finally, the implementation of a SnO x ‐based p–n diode was demonstrated using transparent SnO x thin films developed in this work, illustrating their potential use in transparent electronics.