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Nanosilicon stabilized with ligands: Effect of high‐energy electron beam on luminescent properties
Author(s) -
Aslanov Leonid A.,
Zaytsev Vladimir B.,
Zakharov Valery N.,
Kudryavtsev Igor K.,
Senyavin Vladimir M.,
Lagov Petr B.,
Pavlov Yuri S.
Publication year - 2020
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6836
Subject(s) - photoluminescence , luminescence , materials science , fluence , transmission electron microscopy , electron , absorption (acoustics) , silicon , infrared , irradiation , spectral line , nanoparticle , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , optics , chemistry , composite material , organic chemistry , physics , quantum mechanics , astronomy , engineering , nuclear physics
Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5 mm average diameter. Optical characteristics (photoluminescence and infrared (IR) absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 7‐MeV electrons. The photoluminescence (PL) spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 1.2·10 16 cm −2 , mainly for NHC stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.