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Surface analysis in the semiconductor industry: Present use and future possibilities
Author(s) -
Heide Paul A.W.,
Spampinato Valentina,
Franquet Alexis,
Zborowski Charlotte,
Conard Thierry,
Ludwig Jonathan,
Paredis Kristof,
Vandervorst Wilfried,
Pirkl Alexander,
Niehuis Ewald
Publication year - 2020
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6766
Subject(s) - x ray photoelectron spectroscopy , secondary ion mass spectrometry , analytical chemistry (journal) , nanotechnology , sputtering , materials science , mass spectrometry , orbitrap , chemistry , thin film , chemical engineering , environmental chemistry , engineering , chromatography
Secondary ion mass spectrometry (SIMS), X‐ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) represent three surface analysis techniques heavily used in the complementary metal oxide semiconductor (CMOS) industry. The maturity of these techniques is demonstrated by (a) the diversity of lab‐based instruments used in research and development (R&D) as well as to support fab‐related issues and (b) the fact that highly automated platforms have now been or are being introduced into the fab for process control. Some recent developments of interest in the lab R&D space include the following: (a) the introduction of Orbitrap mass spectrometers into SIMS, (b) the introduction of higher energy monochromated photon sources into standalone lab‐based XPS, and (c) the introduction of commercialized vacuum–scanning probe microscopy (SPM) platforms. The possibilities this opens are demonstrated through (a) SIMS analysis of organics from photoresist materials, (b) XPS subsurface analysis, ie, beyond the sputter front during depth profiling, and (c) SPM analysis of 2D material properties sensitive to the ambient environment, to mention a few.