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Large‐scale quantification of aluminum in Al x Ga 1‐ x N alloys by ToF‐SIMS: The benefit of secondary cluster ions
Author(s) -
Huang Rong,
Chen Xiao,
Li Fangsen,
Ding Sunan,
Yang Hui
Publication year - 2020
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6760
Subject(s) - ion , analytical chemistry (journal) , cluster (spacecraft) , chemistry , mole fraction , range (aeronautics) , crystallography , materials science , organic chemistry , chromatography , computer science , composite material , programming language
Precise determination of composition is requisite for Al x Ga 1‐ x N‐based energy band engineering. Secondary cluster ions in a time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) full spectrum are introduced for accurate quantification of Al in Al x Ga 1‐ x N for AlGaN‐based devices. It was found that statistical analysis with huge number of large secondary cluster ions (without small ions) show much better linear dependence with apparent compensation of matrix effect, particularly in negative polarity. For Al x Ga 1‐ x N with x = 0 to 0.7, x values calculated based on large negative cluster ions (NCIs) show excellent linear dependence with real values. Besides, atomic count ratio of C (Al)/ C (Ga) and C (Ga)/ C (Al) also shows great linear relationships with corresponding mole fraction ratios in a large range. Overlap of these linear ranges offers a reliable and convenient quantification protocol of Al x Ga 1‐ x N covering a full range of x = 0 to 1. This study verifies that the secondary cluster ions are beneficial for quantification of Al x Ga 1‐ x N‐based materials.