Premium
A method to study the electric field distribution on sample surfaces in atom probe analysis
Author(s) -
Chen Sunwei,
Suzuki Takumi,
Tomiyasu Bunbunoshin,
Owari Masanori
Publication year - 2020
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6756
Subject(s) - atom probe , sample (material) , surface (topology) , intensity (physics) , electric field , ion , atom (system on chip) , analytical chemistry (journal) , field ion microscope , distribution (mathematics) , chemistry , field (mathematics) , atomic physics , materials science , molecular physics , optics , physics , geometry , crystallography , mathematics , microstructure , mathematical analysis , organic chemistry , chromatography , quantum mechanics , pure mathematics , computer science , embedded system
We report the development of a nondestructive method to estimate the electric field (EF) distribution on a nano‐sized sample surface in atom probe (AP) analysis. The simulated EF distribution on an ideal hemisphere indicates that the largest EF exists on the geometrical top of the ideal hemisphere and that EF decreases as the emitting area getting away from the sample apex. To estimate the EF distribution on a real sample surface, the sample apex is determined via comparing the field ion microscopy (FIM) signal intensity of {113} planes on the symmetrical sample surface. A series of contour maps showing the intensity of the evaporated ions (eg, H + ) was obtained by applying various EFs on the sample surface. A plot of relative EFs with respect to the emitting angle can thus be extracted.