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Effect of surface modification on the properties of plasma‐polymerized hexamethyldisiloxane thin films
Author(s) -
Saloum Saker,
Abou Shaker Samer,
Alkafri M.Nidal,
Obaid Asmhan,
Hussin Rokayya
Publication year - 2019
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6646
Subject(s) - hexamethyldisiloxane , thin film , plasma enhanced chemical vapor deposition , materials science , plasma polymerization , electrical resistivity and conductivity , plasma , analytical chemistry (journal) , band gap , wafer , surface modification , chemical vapor deposition , silicon , chemical engineering , chemistry , polymerization , composite material , nanotechnology , optoelectronics , polymer , organic chemistry , physics , engineering , quantum mechanics , electrical engineering
Plasma‐polymerized hexamethyldisiloxane (pp‐HMDSO) thin films have been deposited in a radiofrequency (RF) remote plasma‐enhanced chemical vapor deposition (PECVD) system, on different types of substrates: silicon wafers, glass, quartz crystals, and chemiresistor structure. The as‐grown thin films have been post treated in two types of reactive plasmas produced in SF 6 and O 2 gases. The effect of this surface modification on different properties of the as‐grown pp‐HMDSO thin film (chemical structure, elemental composition, surface morphology, film density and thickness, optical bandgap, and electrical resistivity) has been investigated. It is found that SF 6 plasma and O 2 plasma surface modifications of the as‐grown pp‐HMDSO thin film induce property changes different from each other. SF 6 plasma converted the as‐grown pp‐HMDSO film to a more porous material and caused a narrowing of its optical band gap of about 33%, while O 2 plasma induced a lowering of film electrical resistivity of about two orders of magnitude.