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Repair of defects created by Ar + sputtering on graphite surface by annealing as confirmed using ToF‐SIMS and XPS
Author(s) -
Xie Wenjing,
Weng LuTao,
Yeung King Lun,
Chan ChiMing
Publication year - 2018
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6487
Subject(s) - x ray photoelectron spectroscopy , sputtering , annealing (glass) , analytical chemistry (journal) , ion , secondary ion mass spectrometry , highly oriented pyrolytic graphite , materials science , spectral line , graphite , chemistry , thin film , nuclear magnetic resonance , nanotechnology , physics , organic chemistry , chromatography , astronomy , composite material
Defects were created on the surface of highly oriented pyrolytic graphite (HOPG) by sputtering with an Ar + ion beam, then characterized using X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) at 500°C. In the XPS C1s spectrum of the sputtered HOPG, a sp 3 carbon peak appeared at 285.3 eV, representing surface defects. In addition, 2 sets of peaks, the C x − and C x H − ion series (where x = 1, 2, 3...), were identified in the ToF‐SIMS negative ion spectrum. In the positive ion spectrum, a series of C x H 2 +• ions indicating defects was observed. Annealing of the sputtered samples under Ar was conducted at different temperatures. The XPS and ToF‐SIMS spectra of the sputtered HOPG after 800°C annealing were observed to be similar to the spectra of the fresh HOPG. The sp 3 carbon peak had disappeared from the C1s spectrum, and the normalized intensities of the C x H − and C x H 2 +• ions had decreased. These results indicate that defects created by sputtering on the surface of HOPG can be repaired by high‐temperature annealing.