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XPS study during a soft and progressive sputtering of a monolayer on indium phosphide by argon cluster bombardment
Author(s) -
Aureau Damien,
Frégnaux Mathieu,
Njel Christian,
Vigneron Jackie,
Bouttemy Muriel,
Gonçalves AnneMarie,
Etcheberry Arnaud
Publication year - 2018
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6436
Subject(s) - x ray photoelectron spectroscopy , sputtering , indium phosphide , phosphide , materials science , argon , cluster (spacecraft) , indium , ion , nanotechnology , chemistry , optoelectronics , thin film , chemical engineering , metallurgy , metal , organic chemistry , computer science , engineering , programming language , gallium arsenide
Gas cluster ion beam is performed on an ultrathin “polyphosphazene‐like” film grown on indium phosphide substrates to obtain crucial properties of this model system. Unlike “standard” sputtering technique using monoatomic ions, a gentle progressive digging of this subnanometric thick layer has been realized thanks to the unique depth profiling features of gas cluster ion beam. Furthermore, our results highlight the properties of the electrochemically formed film made of phosphorus‐nitrogen electron‐rich chemical bond creating a strong attenuation of the photoelectron underneath. Such approach opens exciting insights in the chemical and physical analysis of sensitive surfaces as ultrathin covering layers.