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Influence of ionic interfacial layers on electronic properties of Alq 3 /Si(100) interface
Author(s) -
Mazur P.,
Sito J.,
Grodzicki M.,
Lament K.,
Crofton M.,
Ciszewski A.
Publication year - 2018
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6432
Subject(s) - ultraviolet photoelectron spectroscopy , x ray photoelectron spectroscopy , ionic bonding , band gap , valence (chemistry) , materials science , electronic structure , analytical chemistry (journal) , chemistry , ion , optoelectronics , computational chemistry , chemical engineering , organic chemistry , chromatography , engineering
The electronic structures of Alq 3 /Si(100), Alq 3 /LiBr/Si(100), and Alq 3 /KCl/Si(100) systems are presented in this report. Their energy level diagrams were prepared and discussed. The formation of the LiBr and KCl interfacial layers between an Alq 3 film and a Si(100) substrate results in a decrease of the energy barrier at the interface. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq 3 as well as LiBr and KCl layers were vapour evaporated onto n‐type Si(100) crystal. The electron affinity of clean Si(100) surface was 4.0 eV, and the position of the valence band maximum was 0.7 eV below E F . The energetic distance between the valence band maximum of Si(100) and the highest occupied molecular orbital level were 1.5, 2.6, and 2.2 eV, for the Alq 3 /Si(100), Alq 3 /LiBr/Si(100), and Alq 3 /KCl/Si(100) systems, respectively.