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Effect of thicknesses of InP epilayers on InP/GaAs heterostructure
Author(s) -
Li Jingjuan,
Guo Zuoxing,
Zhao Liang,
Jia Zhengquan,
Zhang Min,
Zhao Lei
Publication year - 2018
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6326
Subject(s) - materials science , gallium arsenide , heterojunction , microstructure , transmission electron microscopy , crystal (programming language) , substrate (aquarium) , chemical vapor deposition , morphology (biology) , optoelectronics , crystallography , nanotechnology , chemistry , composite material , oceanography , geology , computer science , biology , genetics , programming language
InP epilayers with different thicknesses were grown on GaAs substrates at a low temperature by using metalorganic chemical vapor deposition. Atom force microscope and double‐crystal X‐ray were carried out to investigate the morphology and the crystal quality. Transmission electron microscopy was performed to characterize the microstructure and morphology. It was found that with the epilayer thicknesses increased, the crystal quality was improved and the dislocations in epilayers were decreased. Moreover, the sample that has 150‐nm InP epilayer could observe large numbers of antidislocations in the gallium arsenide substrate. The formation mechanism of antidislocations was also discussed with the analysis of crystal structure and surface morphology. Furthermore, we proposed a mechanism to explain the motion and the reaction of antidislocations.