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Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling
Author(s) -
Kim Kyung Joong,
Jang Jong Shik,
Bennett Joe,
Simons David,
Barozzi Mario,
Takano Akio,
Li Zhanping,
Magee Charles
Publication year - 2017
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6277
Subject(s) - secondary ion mass spectrometry , sputtering , materials science , alloy , ion , layer (electronics) , analytical chemistry (journal) , germanium , mass spectrometry , round robin test , silicon , thin film , chemistry , metallurgy , nanotechnology , chromatography , statistics , mathematics , organic chemistry
An international round‐robin test (RRT) was performed to investigate a method to determine the interface location and the layer thickness of multilayer films by secondary ion mass spectrometry (SIMS) depth profiling as a preliminary study to develop a new work item proposal in ISO/TC‐201. Two types of reference materials were used in this RRT. A SiGe alloy (Si 52.4 Ge 47.6 ) reference film was used to determine the relative sensitivity factors of Si and Ge. A Si/Ge multilayer reference film was used to determine the relative sputtering rates of the Si and Ge layers. The layer thicknesses were measured from the interfaces determined by a 50 atomic percent definition. Seven laboratories from 5 countries participated in this international RRT. The RRT reference expanded uncertainties for Si and Ge layers in a Si/Ge multilayer with similar thicknesses as the reference film were 0.76 and 1.17 nm, respectively. However, those in a thinner Si/Ge multilayer film were slightly larger at 1.04 and 1.59 nm, respectively. Most of the thickness ratios in the 2 Si/Ge multilayer films were consistent with the RRT reference value within their expanded uncertainties.