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Examination of ion beam induced damage on polymer surface using Ar clusters
Author(s) -
Kawashima Tomoko,
Morita Hiromi,
Fukumoto Noriaki,
Kurosawa Takako,
Aoyagi Satoka
Publication year - 2016
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6097
Subject(s) - ion , sputtering , irradiation , polystyrene , ion beam , analytical chemistry (journal) , chemistry , cluster (spacecraft) , secondary ion mass spectrometry , materials science , polymer , static secondary ion mass spectrometry , nanotechnology , thin film , composite material , chromatography , organic chemistry , computer science , nuclear physics , physics , programming language
The damage of polymer surfaces caused by the high energy primary ion beams of TOF‐SIMS was examined using Ar cluster ions. Polymer damage, the damage of secondary ions detected from the polystyrene surface and the damage layer formed by the Bi 3 primary ion beam have previously been studied. In this study, the damage observed in the secondary ions was studied by using Ar cluster primary ions. The secondary ions were mainly classified into two types, ions reflecting the polystyrene structure and cyclized ions, generated by excessive energy, which are not useful for qualitative analysis. The layer damaged by irradiation of the Bi 3 primary ion regarding PS samples was confirmed using Ar cluster sputtering beams. The depth of the layer that has chemical damage in the PS main chain caused by 30 kV Bi 3 ++ (ion dose: 5 × 10 12 ions/cm 2 ) irradiation was approximately 50–60 nm. The Ar cluster ion sputter rate in PS decreases with the Bi 3 ion irradiation. Micro PS particles that are not able to be detected by a conventional TOF‐SIMS measurement can be effectively analyzed by accumulating the secondary ions over the static limit using Ar cluster sputtering. Copyright © 2016 John Wiley & Sons, Ltd.