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SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime
Author(s) -
Kudriavtsev Y.,
Hernandez A.,
Asomoza R.,
Gallardo S.,
Lopez M.,
Moiseev K.
Publication year - 2017
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6067
Subject(s) - secondary ion mass spectrometry , profiling (computer programming) , sputtering , analytical chemistry (journal) , chemistry , ion , mass spectrometry , materials science , nanotechnology , chromatography , thin film , computer science , organic chemistry , operating system
We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to −150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra‐low‐energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.