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Depth resolution in sputter profiling revisited
Author(s) -
Hofmann S.,
Liu Y.,
Jian W.,
Kang H.L.,
Wang J.Y.
Publication year - 2016
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6039
Subject(s) - sputtering , full width at half maximum , resolution (logic) , gaussian , profiling (computer programming) , materials science , analytical chemistry (journal) , optics , chemistry , computer science , thin film , optoelectronics , physics , nanotechnology , artificial intelligence , computational chemistry , chromatography , operating system
Based on a brief review of the well‐established framework of definitions, measurement and evaluation principles of the depth resolution in sputter profiling for interfaces, delta layers, single layers and multilayers, an extension to additional definitions is presented, which include the full‐width‐at‐half‐maximum of layer profiles and non‐Gaussian depth resolution functions as defined by the Mixing‐Roughness‐Information depth (MRI) model. Improved evaluation methods for adequate analysis of sputter depth profiles as well as improved definitions of depth resolution are introduced in order to meet new developments in ToF‐SIMS and GDOES, and in cluster ion sputtering of so‐called delta layers in organic matrices. In conclusion, the full‐width‐at‐half‐maximum definition and measurement of depth resolution, Δ z (FWHM), is found to be more appropriate than the traditional Δ z (16–84%) in order to characterize depth profiles of single layers and multilayers, because it is also valid for non‐Gaussian depth resolution functions. Copyright © 2016 John Wiley & Sons, Ltd.