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Band alignment and defect states in amorphous GaInZnO thin films grown on SiO 2 /Si substrates
Author(s) -
Heo Sung,
Chung JaeGwan,
Lee Jae Cheol,
Song Taewon,
Kim Seong Heon,
Yun DongJin,
Lee Hyung Ik,
Kim KiHong,
Park Gyeong Su,
Oh Jong Soo,
Kwak Dong Wook,
Lee DongWha,
Cho Hoon Young,
Tahi Dahlang,
Kang Hee Jae,
Choi ByoungDeog
Publication year - 2016
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.6024
Subject(s) - x ray photoelectron spectroscopy , spectroscopy , thin film , materials science , band gap , amorphous solid , electron energy loss spectroscopy , analytical chemistry (journal) , sputter deposition , vacancy defect , deep level transient spectroscopy , sputtering , optoelectronics , chemistry , silicon , nuclear magnetic resonance , crystallography , nanotechnology , physics , transmission electron microscopy , quantum mechanics , chromatography
The band alignment and defect states of GaInZnO thin films grown on SiO 2 /Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.