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Surface characterization of CuSn thin films deposited by RF co‐sputtering method
Author(s) -
Kang Yujin,
Park Juyun,
Kang YongCheol
Publication year - 2016
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5995
Subject(s) - x ray photoelectron spectroscopy , sputtering , analytical chemistry (journal) , thin film , auger electron spectroscopy , metal , auger , chemistry , tin , sputter deposition , copper , materials science , metallurgy , nanotechnology , nuclear magnetic resonance , atomic physics , physics , chromatography , nuclear physics
CuSn thin films were deposited by the radio‐frequency (RF) magnetron co‐sputtering method on Si(100) with Cu and Sn metal targets with various RF powers. The thickness of the films was fixed at 200 ± 10 nm. The synthesized CuSn thin films mainly consisted of Cu 20 Sn 6 and Cu 39 Sn 11 phases, which was revealed by an X‐ray diffraction (XRD) study. The high‐resolution Cu 2p XPS and Cu LMM Auger electron spectra indicate that metallic Cu oxidized to Cu + and Cu 2+ as the RF power on Cu target increased. The atomic ratios of Sn 0 and Sn 4+ decreased, while that of Sn 2+ increased with increasing RF power on the Cu target. The polar surface free energy (SFE) component has a different tendency in comparison with the total SFE and the dispersive SFE component. The dispersive SFE component was the dominating contributing factor to the total SFE compared with the polar SFE. Copyright © 2016 John Wiley & Sons, Ltd.