Insertion behavior of sodium and potassium ions into thin CVD‐SiO x  layers by means of a triangular voltage sweep method | Zendy

Gruber S. | Zendy; Krivec S. | Zendy; Pobegen G. | Zendy; Schwab S. | Zendy; Hutter H. | Zendy

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Insertion behavior of sodium and potassium ions into thin CVD‐SiO x layers by means of a triangular voltage sweep method

Author(s) -

Gruber S.,

Krivec S.,

Pobegen G.,

Schwab S.,

Hutter H.

Publication year - 2016

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.5974

Subject(s) - ion , secondary ion mass spectrometry , analytical chemistry (journal) , chemistry , chemical vapor deposition , silicon , voltage , sodium , potassium , insulator (electricity) , materials science , optoelectronics , electrical engineering , chromatography , organic chemistry , engineering

The behavior of Na + and K + migration upon insertion from a polymeric host matrix into different SiO x layers deposited by chemical vapor deposition is investigated via triangular voltage sweep (TVS) measurements. It is indicated that the quality of the oxide, covering a highly doped silicon substrate, has a major influence on the applied bias for transferring ions into and through the insulator. The investigations show the impeding effect of ion insertion as a result of different SiO x qualities. Comparison of the calculated ion dose from TVS and time of flight secondary ion mass spectrometry depth profiling data reveals quantitative capture of the inserted ion species at the SiO x /Si interface. Furthermore, insight into the ion mobility and the reversibility of the migration effect is given by the inversion of the sweep polarity during TVS. Copyright © 2016 John Wiley & Sons, Ltd.

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