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Effect of N 5+ ion implantation on optical and gas sensing properties of WO 3 films
Author(s) -
Kumar Ashutosh,
Keshri Sunita
Publication year - 2015
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5809
Subject(s) - fluence , ion , methane , ion implantation , tungsten , materials science , analytical chemistry (journal) , oxide , range (aeronautics) , chemistry , organic chemistry , chromatography , metallurgy , composite material
In this paper we report the optical and gas sensing behaviours of tungsten oxide (WO 3 ) films, implanted with 45‐keV N 5 + ions of different fluences in the range 1 × 10 15 to 1 × 10 17 cm –2 . The film with fluence 1 × 10 15 cm –2 shows the most intense PL spectrum with two prominent peaks near UV and blue regions. The morphological changes because of ion implantation are also investigated by atomic force microscopy. Because of implantation the gas sensitivity of the film, in exposure of methane, is found to increase with reasonably fast response and recovery times. With the increase of the concentration of methane, the sensors show better result. Present work also includes the effect of N 5 + ion implantation on the structural property of WO 3 films. Copyright © 2015 John Wiley & Sons, Ltd.