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Growth of c ‐axis‐oriented aluminum nitride thin films onto different substrates and buffer layers
Author(s) -
Mori T. J. A.,
Della Pace R. D.,
Andrade A. M. H.,
Corrêa M. A.,
Stamenov P.,
Schelp L. F.,
Dorneles L. S.
Publication year - 2015
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5732
Subject(s) - polyimide , materials science , nitride , aluminium , thin film , buffer (optical fiber) , silicon nitride , ferromagnetism , piezoelectricity , composite material , silicon , optoelectronics , nanotechnology , layer (electronics) , condensed matter physics , electrical engineering , physics , engineering
The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in samples grown at a lower 200 °C temperature directly on glass, Si, or flexible polyimide. In applications where thin and smooth piezoelectric films are necessary, c ‐axis‐oriented AlN can be grown onto a wide range of different surfaces: conducting, insulating, ferromagnetic, antiferromagnetic, or flexible. Copyright © 2014 John Wiley & Sons, Ltd.