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Thickness and coverage determination of multilayer with an island‐like overlayer by hard X‐ray photoelectron spectroscopy at multiple photon energies
Author(s) -
Isomura N.,
Kataoka K.,
Horibuchi K.,
Dohmae K.,
Oji H.,
Cui Y.T.,
Son J.Y.,
Kitazumi K.,
Takahashi N.,
Kimoto Y.
Publication year - 2015
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.5701
Subject(s) - overlayer , x ray photoelectron spectroscopy , range (aeronautics) , photon , photon energy , materials science , analytical chemistry (journal) , spectroscopy , x ray , atomic physics , molecular physics , optics , chemistry , physics , nuclear magnetic resonance , chromatography , quantum mechanics , composite material
To obtain depth profiles of the elemental composition of materials, we propose the use of hard X‐ray photoelectron spectroscopy (HAXPES) over a range of incident photon energies (PEs). Photoelectron intensities are measured as a function of PE and take‐off angle (TOA) from a multilayer sample (Au/SiO 2 /Si). The top layer of the sample (Au) formed an island‐like structure, which we modeled as bumps and dips (surface roughness). The PE dependence, measured at angles close to the surface normal, is consistent with the theoretical results, in contrast to the TOA dependence. The Au coverage and layer thicknesses are calculated by curve fitting using experimental and theoretical results. Copyright © 2014 John Wiley & Sons, Ltd.